By Eric Garfunkel,Evgeni Gusev,Alexander Vul'

An extrapolation of ULSI scaling traits shows that minimal function sizes lower than 0.1 mu and gate thicknesses of <3 nm could be required within the close to destiny. Given the significance of ultrathin gate dielectrics, well-focused easy medical learn and competitive improvement courses needs to proceed at the silicon oxide, oxynitride, and excessive okay fabrics on silicon structures, specifically within the serious, ultrathin 1-3 nm regime. the most thrust of the current ebook is a assessment, on the nano and atomic scale, the advanced medical matters relating to using ultrathin dielectrics in next-generation Si-based units. The contributing authors are top scientists, drawn from educational, commercial and govt laboratories all through the area, and representing such backgrounds as easy and utilized physics, chemistry, electric engineering, floor technology, and fabrics technological know-how.
Audience: either specialist scientists and engineers who desire to maintain up with innovative learn, and new scholars who desire to examine extra in regards to the intriguing uncomplicated examine concerns appropriate to next-generation gadget technology.

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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices: Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin ... 1997 (Nato Science Partnership Subseries: 3) by Eric Garfunkel,Evgeni Gusev,Alexander Vul'


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