By C.K Maiti,S Chattopadhyay,L.K Bera
After an advent to the fabric, next chapters specialize in microelectronics, engineered substrates, MOSFETs, and hetero-FETs. every one bankruptcy provides contemporary examine findings, commercial units and circuits, quite a few tables and figures, very important references, and, the place appropriate, laptop simulations. issues coated contain purposes of strained-Si motion pictures in SiGe-based CMOS expertise, digital homes of biaxial strained-Si movies, and the advancements of the gate dielectric formation on strained-Si/SiGe heterolayers. The booklet additionally describes silicon hetero-FETs in SiGe and SiGeC fabric structures, MOSFET functionality enhancement, and process-induced rigidity simulation in MOSFETs.
From substrate fabrics and digital homes to strained-Si/SiGe technique expertise and units, the variety of R&D actions and effects awarded during this booklet will without doubt spark additional improvement within the field.
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Strained-Si Heterostructure Field Effect Devices (Series in Materials Science and Engineering) by C.K Maiti,S Chattopadhyay,L.K Bera
by Christopher
4.1
